A metal one (M1) layer, first simulated by AlphaEvolve-optimized models and then printed in a single exposure with our X-ray lithography tool at a 12 nm half-pitch, resolution equivalent to the 2 nm node. The M1 layer is the most demanding of an advanced semiconductor device.

These patterns have been printed using a Substrate lithography system with no IP or supply chain input from other advanced lithography tools. The resolution of the features in these images is equivalent to that achievable only with what the semiconductor industry refers to as “High NA EUV lithography” and matches features printed at the 2 nm semiconductor node and below. All of these images were printed in a single exposure, with no multi-patterning.

Substrate is building a next-generation foundry to return America to dominance in semiconductor production. To achieve this, we will use our technology—a new form of advanced X-ray lithography—to power them. America invented semiconductors. We will lead again.